Plasma Etching of Copper Films Using IR Light Irradiation

Copper films are etched at a low temperature of 60 °C using a Cl2 plasma etching method with IR light irradiation. The etch rate is as high as 1 μm/min. The anisotropic Cu line patterns are obtained independent of the Cl2 gas flow rate and the etching pressure conditions. Moreover, there is no corrosion on the etched sample.