Semiconductor device and method thereof

Provided are a semiconductor device and a fabricating method thereof, by using a single mask to form an opening part for a substrate penetration via and also an opening part for a dielectric penetration via. According to an embodiment, a contact etching stop layer is deposited on a first semiconductor device and a second semiconductor device, and between the first semiconductor device and the second semiconductor device. A dielectric material is deposited on the contact etching stop layer between the first semiconductor layer and the second semiconductor layer. The single mask forms the substrate penetration via through the first semiconductor device. Also, the contact etching stop layer and different materials of the dielectric material are used to form the dielectric penetration via through a dielectric material. So, power consumption can be reduced.