Design of high-power room-temperature continuous-wave gasb-based type-I quantum-well lasers with wavelength > 2.5μm

Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82pm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82μm.