Semiconductor device with siliceous metal wiring layer and manufacturing method thereof

The present invention relates to a semiconductor device and manufacturing method thereof. In the semiconductor device, an insulating interlayer (103, 203) has a groove formed on the insulating layer (101, 201). Comprising a silicon-containing metal layer (111,221) a non-metal silicide buried in the trench. Metal diffusion barrier layer (109,208) is formed on the silicon-containing metal layer and the insulating interlayer.