Old Web
English
Sign In
Acemap
>
Paper
>
High-Mobility a-IGZO Thin-Film Transistor Using Ta 2 O 5 Gate Dielectric
High-Mobility a-IGZO Thin-Film Transistor Using Ta 2 O 5 Gate Dielectric
2010
C. J. Chiu
S. P. Chang
C. Y. Lu
S. J. Chang
Keywords:
Gate dielectric
Nanotechnology
Thin-film transistor
Electronic engineering
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]