Surface science lettersPhotoemission study of the interfacial formation process and reactions between Al and hydrogenated amorphous Si

Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process and the reactions between A1 and hydrogenated amorphous Si are probed, and annealing behaviors of the A1/a-Si: H system are investigated as well. It is found that a three-dimensional growth of A1 metal clusters which includes reacted A1 and non-reacted metal A1 occurs at the initial A1 deposition time, reacted A1 and Si alloyed layers exist in the A1/a-Si: H interface, and non-reacted A1 makes layer-by-layer growth forming a metal A1 layer on the sample surface. The interfacial reactions and element interdiffusion of A1/a-Si: H are promoted under the vacuum annealing.