AReferenced Geometry BasedConfiguration Scalable MextramModelforBipolar Transistors

A behavioral reference basedmodelfor configuration scaling of bipolar transistor model parameters isproposed. Themodelisapplicable to bipolar technologies withoneortwocollector contacts anddifferent numberofemitters. Theeffectiveness of theproposed scaling methodology isverified incase studiesusingadvancedhigh-speed SiGe HBT technology. IndexTerms - Geometry scaling, Multi-emitter SiGe HBT, Mextrammodel,thermalresistance, collector resistance.