Thermal Tb emission quenching in YAlO3 matrix embedded in porous anodic alumina

Abstract Terbium doped YAlO 3 composites were fabricated by the co-precipitation method in a porous anodic alumina (PAA) films grown on silicon at three different Tb concentrations: 0.23, 0.87 and 2.11 at.%. To investigate the emission thermal quenching for all samples, we measured the emission spectra as a function of temperature in the range from 10 up to 500 K at 266 and 488 nm excitation wavelengths. Based on obtained results we proposed the physical model explaining the mechanism of Tb 3+ emission quenching in YAlO 3 composites deposited into PAA film.