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Ruggedness and reliability of GaN HEMT
Ruggedness and reliability of GaN HEMT
2011
Yamaki
Inoue
Nishi
Haematsu
Ebihara
Nitta
Sano
Keywords:
Breakdown voltage
High-electron-mobility transistor
Gallium nitride
Optoelectronics
Reliability (semiconductor)
Stress (mechanics)
Radio frequency
Materials science
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