Old Web
English
Sign In
Acemap
>
Paper
>
Modeling of trapping and abrupt doping effects in MESFET's using R-dynamic element
Modeling of trapping and abrupt doping effects in MESFET's using R-dynamic element
1994
J. Ladvanszky
Mauri J. Valtonen
Keywords:
Electrical resistance and conductance
Analogue electronics
MESFET
Frequency response
Gallium arsenide
Doping
Field-effect transistor
Electronic engineering
Materials science
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]