D & TOF‐SIMS failure analysis of P‐buried layer from BiCMOS transistors

2011 
D & TOF-SIMS instruments are used in conjunction with other analytical techniques in order to identify the sources of metallic contamination and particle-type defects. In this paper D & ToF-SIMS are used to identify metals in the P-type buried layer of BiCMOS transistors and eliminate them in order to improve the overall device performance and process yield. Copyright © 2010 John Wiley & Sons, Ltd.
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