Explicit continuous current-voltage (I-V) models for fully-depleted surrounding-gate MOSFETs (SGMOSFETs) with a finite doping body.

Explicit Continuous Current–Voltage (I–V ) Models for Fully-Depleted Surrounding-Gate MOSFETs (SGMOSFETs) with a Finite Doping Body Yun Seop Yu1 ∗, Namki Cho2, Jung Hyun Oh3, Sung Woo Hwang2, and Doyeol Ahn3 1Department of Information and Control Engineering and Electronic Technology Institute, Hankyong National University, 456-749, Anseong, Gyeonggi, Korea 2Research Center for Time-Domain Nano-Functional Devices and Department of Computer and Electronics Engineering, Korea University, 136-075, Seoul, Korea 3Institute of Quantum Information Processing and Systems, University of Seoul, 130-743, Seoul, Korea