High Resistivity GaN Formed by Ion Implantation

Advanced high frequency devices using GaN-based semiconductor require the technology to form high resistivity regions with high thermal stability to electrically isolate the active elements from surroundings, as well as from the underlying substrate. The present paper describes the preparation of thermally stable, high resistivity GaN layers by ion implantation. It was confirmed that C or Zn implantation yielded high resistivity layers. In particular, Zn implantation yielded the layers with resistivity on the order of 10 10 cm, which could be sustained at temperatures as high as 1000.