GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers
1999
The submillimeter wavelength region is the last undeveloped spectral window in astronomy. The poor transmission of the atmosphere, and the lack of high-performance detectors prevent astronomical observations in this window. We have recently started a development of photoconductors utilizing shallow donor levels in GaAs semiconductors. The GaAs photoconductor promises to be a good candidate of a photo detector for use in future space mission for submillimeter astronomy. We have constructed facilities for liquid-phase epitaxy to obtain ultra-pure GaAs crystals which were absolutely necessary for a fabrication of photoconductors. The first experimental results are reported.
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