Relationship between electrophysical properties and structure defects of Cd1-xZnxTe crystals and conditions of their preparation

Relationship has been studied between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd 1-x Zn x Te. The crystals were grown both from the raw material which had been pre-synthesized in quartz ampoules, and from the raw material synthesized from the elements directly in the growth furnace. It is shown that the best values of electric resistivity (rho) and sensitivity to x-ray and gamma-radiation are obtained for crystals grown in crucibles of highly pure coal graphite material from the pre-synthesized raw charge. Correlation has been established between values of (rho) and crystal defectness: decrease of dislocation density by 10 4 times led to 10 7 times higher values of resistivity. Concentration of dislocation etching pits regularly decreased with higher purity of the raw material and optimization of crystal preparation technology.