High‐contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry–Perot modulator, detector, and resonant tunneling diode

The realization at room temperature of a high contrast ratio (20:1) and an on‐state reflectivity of 46.5% in an optically bistable switch involving strained InGaAs/GaAs (100) multiple‐quantum‐well‐based asymmetric Fabry–Perot reflection modulator, detector, and InGaAs/AlAs‐based resonant tunneling diode and an Si field‐effect transistor is reported.