Low-threshold GaAlAs/GaAlAs ridge waveguide lasers with dry-etched facets

Low-threshold, high-performance dry-etched ridge waveguide lasers with dry etched facets are of interest for monolithic two-dimensional coherent applications such as optical interconnects and optoelectronic integrated circuits. We report on low threshold current and wavelength emission < 8000 angstroms laser diodes with short cavity and dry etched facets. The facets are fabricated by reactive ion etching, which provides nearly vertical walls. For the first time, coherent GaAlAs/GaAlAs laser diodes (emission wavelength 7940 angstroms at room temperature) with cw threshold currents as low as 4 mA (room temperature) and 0.8 mA (at 77 degree(s)K) were achieved on a 4-micrometers -wide, 100-micrometers -long device.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.