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Characterization of Modulation Doped Field Effect Transistors with Gate Lengths Down to 600 Angstroms.
Characterization of Modulation Doped Field Effect Transistors with Gate Lengths Down to 600 Angstroms.
1988
de la Houssaye
Paul Raymond
Keywords:
Optoelectronics
Field-effect transistor
Materials science
Angstrom
Modulation
Doping
Correction
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