The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$
2003
Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si$_{(1-x)}$Ge$_x$ is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997).
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