Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0–2.5 μm laser structures on GaSb substrates

Abstract The incorporation of As and In during MBE growth in (AlGaIn)/(AsSb) layers used for the fabrication of diode lasers in the 2.0–2.5 μm wavelength range has been investigated. The As content was found to depend linearly on the beam equivalent pressure for As mole fractions between y =0.05 and y =0.20. Broad area AlGaAsSb/GaInAsSb single-quantum well laser diodes with quasi-cw output at room temperature at an emission wavelength of 2.03 μm and a threshold current density of 515 A/cm 2 for 1370 μm long and 70 μm wide devices have been fabricated. In order to shift the emission wavelength of the laser structures to longer wavelengths, the growth of lattice matched AlGaAsSb/GaInAsSb laser core structures with different In and As mole fractions in the quantum wells has been investigated.