Monolithically wavelength-stabilized high power diode lasers

GaAs-based diode lasers that deliver high powers at high efficiencies within a narrow, stable spectral window are in strong demand for applications including solid state laser pumping and direct material processing. Wavelength stabilization can be integrated in the diode laser using surface patterning or etch and regrowth techniques. We review recent performance, focusing on diode lasers with distributed feedback with lasing wavelength of 975 nm. We show that DFB lasers operate with conversion efficiency that is 4…8 %-points (1.07x to 1.17×) lower than reference devices, review performance limits and note potential approaches to address these limits.