Novel Buried Bitline Integration for compact Cell Design in High-Performance embedded Flash Memory with Deep Trench Isolation

In this work, we present a novel buried BL (BBL) concept that links the source contacts of each individual BL via the isolated p-well; thus effectively eliminating one metal line per BL and reducing overall cell size. In comparison to the UCPE cell, a conservative cell size shrink of about 40% can be achieved from a standard embedded 21F 2 DT-UCPE-cell. The schematic cell layout is shown and comparison to that of a conventional UCP-layout is presented