Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation
2016
Controlling the defects and transition layer in SiO 2 films grown on 4 H -SiC via direct plasma-assisted oxidation
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
35
References
22
Citations
NaN
KQI