Low polarisation sensitivity electroabsorption modulators for 160 Gbit/s networks

D.G. Moodie,P. Cannard,A.J. Dann,D.D. Marcenac,Colin Ford,J. Reed,R. Moore,J.K. Lucek,Andrew D. Ellis

Low polarisation sensitivity electroabsorption modulators for 160 Gbit/s networks

1997

D.G. Moodie
P. Cannard
A.J. Dann
D.D. Marcenac
Colin Ford
J. Reed
R. Moore
J.K. Lucek
Andrew D. Ellis

Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160 Gbit/s OTDM systems is experimentally assessed.

Keywords:

Heterojunction
Electronic engineering
Polarization (waves)
Optoelectronics
Mathematics
Gigabit
ingaas inalas

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