Realization of 5 h e 2 with graphene quantum Hall resistance array

We report on the realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicate that the quantized Hall resistance across an array at a filling factor of 2 is equivalent to 5 h e 2 within the measurement uncertainty of approximately 4  × 10−8. A quantum Hall phase diagram for the array shows that a metrological quantization of 5 h e 2 can be achieved at the magnetic field of 6 T and a temperature of 4 K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions.We report on the realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicate that the quantized Hall resistance across an array at a filling factor of 2 is equivalent to 5 h e 2 within the measurement uncertainty of approximately 4  × 10−8. A quantum Hall phase diagram for the array shows that a metrological quantization of 5 h e 2 can be achieved at the magnetic field of 6 T and a temperature of 4 K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions.