InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof

The invention discloses an InAs/GaSb superlattice infrared photoelectric detector, comprising: a GaSb substrate (1); an epitaxial wafer prepared on the GaSb substrate and sequentially comprising, from bottom to top, a GaSb buffer layer (2), a p-type ohmic contact layer (3), an InAs/GaSb superlattice layer and an InAs cover layer (8); and etching is implemented on the epitaxial wafer with phosphoric acid and citric acid solution by adopting standard photoetching technique so as to expose the p-type ohmic contact layer (3), and electrodes made of alloys are then respectively sputtered on the p-type ohmic contact layer (3) and the InAs cover layer (8). The invention simultaneously discloses a manufacturing method of the InAs/GaSb superlattice infrared photoelectric detector. According to the invention, the InAs/GaSb superlattice infrared photoelectric detector can be manufactured by utilizing InAs/GaSb superlattice material.