一种增益可控型LR-WPAN CMOS功率放大器

A gain controllable CMOS class AB RF power amplifier for low rate wireless personal area network (LR-WPAN) applications was designed. The gain control was implemented with two digital bits, and the load LC net work was implemented with on-chip inductor and capacitor, which can improve the integration of the chip. The design was done in 0.18 μm CMOS technology, and simulated with SpectreRF in 2.4 GHz ISM band, experiment results show that the power amplifier has well specifications; the minimum S21 is 13.7 dB and the minimum output-referred third-order intercept points (P(subscript OIP3)) is 6.74 dBm, the minimum power added efficiency (PAE) is 14.3% with the input power of-10 dBm, the specifications are suitable for LR-WPAN applications.