Excimer laser assisted deposition of SiO2-structures on semiconductor substrates from siliconorganic films

New approach to the surface patterning is considered based on UV laser assisted decomposition of films of silicon organic compounds (SOC). Basic regimes of films processing are studied :the direct laser produced transformation of Soc into the silicon oxide, self— developing (ablating) as well as conventional UV laser lithography. Submicron structures of high quality silicon dioxide are realized