Quantitative analysis of phosphorus in amorphous silicon using PIXE with a crystal spectrometer and PIPC

Abstract A PIXE (particle induced X-ray emission) method for analyzing impurities in solid materials was developed using a crystal spectrometer combined with a position sensitive proportional counter (PSPC). Numerical expressions for quantitative analysis of impurities by this method are established. This technique was applied to the nondestructive measurement of P in a-Si matrix. The concentration of P obtained in this method is 0.717%, which is consistent with the value of 0.68% deduced from the Auger electron spectroscopy.