Integration of RF MEMS switch with MMIC pHEMT and passive devices on GaAs

Process integration of RF MEMS switches with MMIC pHEMT devices and passive components on GaAs has been developed. Measurement results of the RF MEMS switches showed a C down /C up ratio of approximately 20:1, pHEMT devices with gate periphery of 1.2 mm show an I max of 400 mA/mm, with f T and f max of 60 GHz and 100 GHz, respectively. TaN resistors were measured at 65 Ω/□ sheet resistance, the MIM capacitors have a capacitance of 550 pF/mm 2 and the 5 turn spiral inductors have approximately 4.3 nH inductance.