High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

A method for reducing the on-state resistance of a high-power 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p-region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved.