First photopumped yellow–green lasing operation of BeZnSeTe/(MgSe/BeZnTe) doublehetero structures (DHs) grown on InP substrates

Abstract BeZnSeTe/(MgSe/BeZnTe) double heterostructures were fabricated on InP substrates by molecular beam epitaxy and their optical exciting laser properties were evaluated. Yellow–green lasing at 564 nm at room temperature was achieved for the first time. The threshold excitation power density was 149 kW/cm 2 when the cavity length was 2 mm. The threshold power density linearly decreased with a decrease in the inverse of cavity length, which agreed with the theoretical expectation. The potential of BeZnSeTe for the use as an active layer for yellow–green laser diodes has been proved.