E/W-Band CPW-based Amplifier MMICs Fabricated in a 60 nm GaN-on-Silicon Foundry Process

This paper presents an experimental evaluation of two co-planar waveguide (CPW) based E/W-band amplifier MMICs realised in a 60 nm GaN-on-Si foundry process. A one-stage amplifier and a two-stage amplifier realised in this process have a measured maximum gain of 8 dB and 16 dB at 73–74 GHz, respectively. The two amplifiers have a measured gain of 3 dB and 7 dB at 93 GHz when the drain voltage (V d ) is 10 V and the drain current (I d ) is 15 mA per stage. The two-stage amplifier has a measured noise figure (NF) of 2.7-3.8 dB and 2.9-4.1 dB at 90–95 GHz when the I d is 10 mA and V d is 5 V and 10 V, respectively. The measured NF of this amplifier is equal to 4–6 dB at 92–95 GHz when an I d of 10–20 mA is used in each stage with same drain bias.