High-Performance Ultraviolet 385-nm GaN-Based LEDs With Embedded Nanoscale Air Voids Produced Through Atomic Layer Deposition and Al 2 O 3 Passivation

This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al 2 O 3 dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by $\sim 32.7$ %, resulting in a high-power UV light-emitting device.