High-voltage microsecond pulse generator for plasma immersion ion implantation

The generator is intended to supply plasma immerse ion implanters. It has the following parameters: voltage pulse amplitude - (20/spl divide/60) kV, current pulse amplitude - (100/spl divide/40) A, pulse length - (5/spl divide/20) /spl mu/s, leading edge length - 1 /spl mu/s, decay length - 2 /spl mu/s, pulse frequency - up to 1000 Hz, average power - up to 10 kW. The generator is made by the scheme of a modulator with partial capacity discharge. A high-power modulator tube GMI-29A1 (40 kV, 200 A) is used as a switch. A driver is made at a JGBT transistor. A pulse from modulator is applied by the cable to the step-up pulsed transformer placed near the implanter. The transformer has a winding switch allowing controlling the output voltage from 20 to 60 kV at a distance by 6 steps. Smooth control is realized by the power supply. The modulator has the current protection of the power supply and rapid (0.5 /spl mu/s) current protection of the modulator tube. The modulator can be controlled both from the local control board and at a distance - from the computer. The generator has a load equivalent on the basis of a water resistor. The generator also can be used as an accelerating voltage power supply for charged particle beam sources.