Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well

Abstract The optical gain spectra of doped lattice-matched GaNAsBi–based single quantum well (SQW) was theoretically investigated using a (16 × 16) band anti-crossing (BAC) model combined with self-consistent calculation. For the sake of comparison, we computed the optical gain of both (i-n-i) and (i-p-i) doped well types in GaAs/GaNAsBi/GaAs quantum structure. The highest obtained material gain G m a x was 1.2 × 10 4 c m − 1 for (i-n-i) type doped with N 2 D d = 2.5 × 10 12 c m − 2 . We proposed investigating the p-i-n type structure to enhance the optical performance of GaAs/GaNAsBi/GaAs SQW. The Bi composition was optimized in order to obtain T e 1 − h 1 = 1.55 μ m . The effect of well width on optical gain spectra was also discussed.