Wide-bandgap semiconductor element

This wide-bandgap semiconductor element is provided with a semiconductor substrate (epitaxial substrate (20)) that has a principal surface (top surface (P2)) and comprises a wide-bandgap semiconductor. Said semiconductor substrate (20) has a device region (20E) and a surrounding region (20T) surrounding said device region (20E). In the surrounding region (20T), the semiconductor substrate (20) has a first semiconductor region (drift layer (21)) that has a first conductivity type and a second semiconductor region (field-limiting region (25)) that is formed on top of the first semiconductor region (drift layer (21)), has a principal surface (P2), and has a second conductivity type that is different from the first conductivity type. In the outermost part of the surrounding region (20T), the semiconductor substrate (20) has a plurality of steps (71) that form rings around the device region (20E). The second semiconductor region is formed so as to follow the contours of said steps (71).