Switching characteristics of NiOx crossbar arrays driven by low-temperature electroforming

In this work, we systematically studied the temperature dependence of the current–voltage characteristics of Pt/ $$\hbox {NiO}_{{x}}$$ /Pt crossbar-type devices. We find that the resistive memory switching performance of the device can be controlled by temperature. Specifically, devices that do not show resistive switching at room temperature can be made to exhibit this phenomenon after forming stable conductive filaments at low temperatures.