Impact of contact resistance on the performances of graphene field-effect transistor through analytical study

Currently, owing to its remarkable electro-mechanical, thermal, and optical properties, graphene has attracted tremendous attention in the research community as one of the most prominent materials in modern electronic technology. In recent years, the graphene field-effect transistor (G-FET) has exhibited outstanding radio frequency performance and unprecedented sensitivity. Generally, the contact or parasitic resistance significantly influences the different characteristics of a large area G-FET. In this work, we have determined the effect of contact resistance from different characteristics of a G-FET. We have found that contact or parasitic resistance has a meaningful impact on the device’s different characteristics, i.e., transfer characteristics, transconductance, cut-off frequency, etc. The analytical results have indicated that the transconductance and cut-off frequency of a G-FET decrease significantly with a higher value of contact resistance. Thereafter, reducing contact resistance according to experimental conditions will predict revolutionary changes in fabrication technology for graphene-based devices.