Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure

Abstract Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current–voltage characteristics of Al/diazo compound containing polyoxy chain/p-Si structure present rectifying behaviour. The Schottky barrier height (SBH), diode factor ( n ), reverse saturation current ( I o ), interface state density ( N ss ) of Al/diazo compound containing polyoxy chain/p-Si structure have been calculated from experimental forward bias current–voltage data measured in the temperature range 100–320 K and capacitance–voltage data measured at room temperature and 1 MHz. The calculated values of SBH have ranged from 0.041 and 0.151 eV for the high and low temperature regions. Diode factor values fluctuate between the values 14 and 18 with temperature. Such a high diode factors stem from disordered interface layer in a junction structure as stated by Brotzmann et al. [M. Brotzmann, U. Vetter, H. Hofsass, J. Appl. Phys. 106 (2009) 063704]. The calculated values of saturation current have ranged from 3×10 −11  A to 2.79×10 −7  A and interface state density have ranged from 5×10 11  eV −1  cm −2 and 4×10 13  eV −1  cm −2 as temperature increases. Results show that Al/diazo compound containing polyoxy chain/p-Si structure is a valuable candidate for device applications in terms of low reverse saturation current and low interface state density.