EFFECTS OF SELF ION IRRADIATION ON SECONDARY DEFECTS IN MeV P + IMPLANTED Si *

Abstract By using plan view and cross sectional transmission electron microscopies and Rutherford backscattering and channeling spectroscopy technologies, the secondary defect in MeV P + implanted Si and the effect of self ion irradiation on them have been investigated. The experimental results showed that the depths of secondary defect peaks are a little bit larger than the mean projected ranges measured and those computed by using program TRIM. The results also pointed out that the self ion irradiation onto the MeV P + implanted Si with a suitable energy and dose before annealing can reduce the secondary defect formation. But if the self ion irradiation is applied after the annealing, the effects will be contrary. The physical reason of these has been discussed. Furthermore, the critical dose of the secondary defect occurring in Si + and P + implanted Si have been presented, and the relation of the critical dose with the ion implantation energy has been also discussed.