Optical Recording in Ga and In-Doped Zinc Oxide Thin Films Grown by Radio-Frequency Magnetron Sputtering

Thin films of Zn-Ga-In oxide have been deposited on glass substrate at room temperature by rf magnetron sputtering with three targets of Zn, ZnO doped with 7 wt% Ga2O3 and ZnO doped with 7 wt% In2O3. In the oxide films prepared by this method, the difference in the transmittance, ΔT, between the annealed state(350°C × 30 min) and the as-deposited state was 41% at 380 nm, 61% at 390 nm and 72% at 400 nm. The ability to record on these oxide films without a protection layer, using SHG of Nd:YAG laser (λ=532 nm, 6 ns, 69 mW/µm2) was confirmed.