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450 GHz f T SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node.
450 GHz f T SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node.
2018
Alexis Gauthier
J Borrel
Pascal Chevalier
G. Avenier
A Montagne
Marc Juhel
Romain Duru
L Clement
C. Borowiak
M. Buczko
Christophe Gaquiere
Keywords:
CMOS
Node (circuits)
Heterojunction bipolar transistor
Materials science
Optoelectronics
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