Optimization of diamond growth with statistical experiment design in an electron cyclotron resonance plasma

Multivariable statistically designed experiments have been used to optimize diamond growth in a H2‐CH4‐O2 magnetoactive plasma at 1–3 Torr total pressure. The input process parameters included total pressure, microwave power, substrate temperature, methane and oxygen fractions, and applied substrate bias, and the experimental response outputs were diamond film growth rate and crystallinity. A clearly defined characteristic 1333 cm−1 Raman peak with a 5 cm−1 full width at half‐maximum identified the optimum diamond crystal growth conditions of H2 (75%)‐CH4 (13%)‐O2 (12%), 3 Torr total pressure, and 650 °C substrate temperature.