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A 0.135 m2 6F2 trench-sidewall vertical device cell for 4 Gb/16 Gb DRAM
A 0.135 m2 6F2 trench-sidewall vertical device cell for 4 Gb/16 Gb DRAM
2000
Carl J. Radens
Ulrike Gruening
Jack A. Mandelman
Michael Seitz
Dallas M. Lea
Daniel C. Casarotto
Larry Clevenger
Larry Nesbit
Rayaz Ahmed Malik
Sylvain Hall
Stephan Kudelka
Hendrik Tews
Rama Divakaruni
Jai-Hoon Sim
Alvin W. Strong
D. Tibbel
Nikita Arnold
Scott J. Bukofsky
Jurgen Preuninger
Gerhard Kunkel
Gary B. Bronner
Keywords:
Shallow trench isolation
Electronic engineering
Trench
Dram
Geology
Correction
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