Polysilicon nanowire NEMS fabricated at low temperature for above IC NEMS mass sensing applications

In this work, we demonstrate for the first time the performance of polysilicon (poly-Si) NEMS fabricated with a low temperature process compatible with a NEMS above IC 3D integration. Most important figures of merit feature values still competitive in comparison to mono-crystalline (c-Si) NEMS: Allan deviation, quality factor (Q), Signal-to-Background ratio (SBR), Dynamic Range (DR), yield and variability, piezoresistive and elastic properties. We found the best process window (laser annealing conditions and dopant concentration) to optimize poly-Si NEMS with excellent features compared to conventional c-Si NEMS. The goal of this study is to replace c-Si for low cost 3D integration.