Hot-phonon lifetime in a modulation-doped AlInAs/GaInAs/AlInAs/InP

The experimental dependence of microwave noise temperature on supplied electric power is used to study hot phonons in an InP-based modulation-doped In0.52Al0.48As/In0.53Ga0.47As/In0.7Ga0.3As/In0.52Al0.48As heterostructure with a two-dimensional electron gas channel (n2D = 2.3 × 1012 cm−2). The effective hot-phonon temperature is extracted for two-subband and six-subband models treated in the electron-temperature approximation. The estimated value for the hot-phonon lifetime with respect to the longitudinal optical phonon conversion into other vibration modes is (0.9 ± 0.3) ps at room temperature.