A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response

We have developed a basic concept for a non-quasi-static (NQS) metal-oxide-semiconductor field-effect transistor (MOSFET) model for circuit simulation. The model is based on a carrier-response delay, and incorporates the time and position dependence of the carrier density along the channel. This is the exact origin of the NQS effect. By comparing model results with 2D device simulation results, solving the continuity equation explicitly, we found that the carrier-response delay consisted of a conductive delay and a charging delay. The developed model was successfully applied to test transient behavior of the drain current.