Partial Interdiffusion of InGaAs/GaAs MQW Modulators for Photonic Integration

To realize a photonic integration of different optoelectronic waveguide devices based on the same layer structure a process-induced shifting of the bandgap energy is required. Partial interdiffusion of Si02 capped multiple quantum well (MQW) structures has attracted much attention, because of the large blue-shift of the band-gap energy [1],[2]. A key aspect for potential laserdiode/modulator integration is the study of the electroabsorption due to the quantum-confined Stark effect in such partially diffused MQWs. An enhancement of the electroabsorption by 30 % in diffused AlGaAs/GaAs quantum wells has recently been predicted [3].