Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor

Abstract Current annealing, which utilizes high level of drain current during device fabrication, is proposed. A semiconductor device β-Ga2O3 field-effect transistor is preferred as test vehicle because of its inherently high drain current. With just a few seconds of current annealing, drain output performance can be boosted more than 50% without adding other processes. Both electrical measurements and numerical simulations are performed to investigate the annealing behavior. Especially, proposed substrate engineering to promote thermal isolation enables better power consumption during current annealing.